{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/50009112"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "According to an aspect of the present invention, provided is a method of manufacturing a lateral insulating gate type field effect transistor which is comprised of the steps of forming a projected portion on a first major surface side of a semiconductor substrate, forming a first gate portion on said projected portion, forming an insulating layer on the whole surface of said semiconductor substrat" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/50009112"] } } }
