{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/73942576"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Subsequently, on the main surface side of the single crystal silicon substrate 1, there is formed a trench 3 having a perpendicular wall with a predetermined depth, e.g. ranging from about 0.2 to about 30 ??m." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/131673050"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/73942576"] } } }
