{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/84414862"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "A further aspect of the present invention is a method of manufacturing a semiconductor device which method comprises: forming a first insulating layer; forming a conductive pattern comprising a plurality of spaced apart conductive lines; forming a second insulating layer on the conductive pattern; forming a metal interconnection line on the second insulating layer; forming at least one elongated s" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/84414862"] } } }
