{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/84560588"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "If the conformally deposited conductive covering layer 33 andthe dielectric covering layers 32 are etched back in a suitable way, the result, likewise without further measures, is a conductive connection between the respective outer electrodes 31 of the recurring partial structures.EXAMPLE 1During the processing of vertical transistor structures, such as trench power transistors and IGBTs (isolate" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "patentgenius.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/3078983"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/84560588"] } } }
