{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/94696564" ] } },

    { "id" : "http://webisa.webdatacommons.org/94696564"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "A hundred seventeenth aspect of the present invention is a method for producing a semiconductor device, comprising the step of: using a semiconductor substrate on which a plurality of second regions that linearly extend and that are made of a crystal having a second average defect density are regularly a" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com"] } } }
