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In the preferred embodiment of the invention, a barrier layer 22 formed of a conductor such as titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), titanium (Ti), tungsten (W), molybdenum (Mo) or chromium (Cr), a silicon-based material such as polysilicon, a silicide, or polycide, or a conductive oxide such as indium tin oxide (InSnO), tin dioxide (SnO2), ruthenium oxide (Ru2 O3) and ot
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