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Another method is that a thin layer of SiO2, TiO2, CeO2, or Al2 O3 is formed on the surface of the substrate by means of electron-beam heated evaporation in vacuum, sputtering, or coat-baking of a solution of organic silicon or titanium compound such as Si(OR)4 or Ti(OR)4 (where R is an alkyl radical), and then the so-formed layer is subjected to rubbing in a given direction before it is treated w
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