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isa:331453028
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Current methods of thinning semiconductor wafersoften lead to damage of the semiconductor chips.SUMMARY OF INVENTIONA first aspect of the present invention is a method of forming a semiconductor interconnect comprising, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer;(c) reducing the thickness of the wafer
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isa:331453028