<http://webisa.webdatacommons.org/102133052>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/137300572>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/102133052> .
<http://webisa.webdatacommons.org/102133052>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/102133052>	<http://www.w3.org/ns/prov#value>	"Another object of the present invention is a method of manufacturing a CMOS semiconductor device with design features of 0.25 microns and under, with independent control of the length of the channel region of the N- and P-channel transistors." .