<http://webisa.webdatacommons.org/216861206>	<http://www.w3.org/ns/prov#value>	"The present invention enjoys particular applicability in the manufacture of high density semiconductor devices with metal features in the deep submicron range. [0029] Only the preferred embodiment of the present invention and but a few examples of its versatility are shown and described in the present disclosure." .
<http://webisa.webdatacommons.org/216861206>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.ca> .
<http://webisa.webdatacommons.org/prov/315551387>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/216861206> .
<http://webisa.webdatacommons.org/216861206>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .