<http://webisa.webdatacommons.org/308296176>	<http://www.w3.org/ns/prov#value>	"The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly to a semiconductor device having a CMOS dual-gate electrode structure; that is, a polymetal gate electrode structure which prevents interface resistance from arising between polysilicon and a metal film while suppressing interdiffusion and depletion of polysilicon o" .
<http://webisa.webdatacommons.org/308296176>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/396589647>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/308296176> .
<http://webisa.webdatacommons.org/308296176>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .