<http://webisa.webdatacommons.org/317009240>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.fr> .
<http://webisa.webdatacommons.org/317009240>	<http://www.w3.org/ns/prov#value>	"In an embodiment of the present invention, the gate dielectric layer 206 is a silicon oxynitride film formed to a thickness between 5-20 ???." .
<http://webisa.webdatacommons.org/317009240>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/149905123>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/317009240> .