<http://webisa.webdatacommons.org/380465420>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<faqs.org> .
<http://webisa.webdatacommons.org/380465420>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/2995582>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/380465420> .
<http://webisa.webdatacommons.org/380465420>	<http://www.w3.org/ns/prov#value>	"a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming" .