{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/173769245"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The MOS transistor size on which the present invention is particularly effective is 0.1 ??m or less in terms of design rule for MOS transistors for use in DRAM memory cells, or 70 nm or less in terms of gate length for MOS transistors for use in CMOSs." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/502592936"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/173769245"] } } }
