"The quality of the crater formed in FIG. 2C is neither uniform nor predictable. [0008] To avoid damage to the substrate 42 while maintaining sufficient energy to process a metal or nonmetal link 22, Sun et al. in U.S. Pat. No. 5,265,114 and U.S. Pat. No. 5,473,624 proposed using a single 9 to 25 ns pulse at a longer laser wavelength, such as 1.3 ??m, to process memory links 22 on silicon wafers." . . . .