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That is, by trapping a charge of approximately 100 electrons in the floating gate of the NOR flash memory cell, having dimensions of 0.1 ??m (10???5 cm) by 0.1 ??m, will raise the threshold voltage of the NOR flash memory cell to 1.0 Volt and a 1.0 Volt control gate potential will not be sufficient to turn the device on, e.g. Vt=1.0 V, I=0. [0062] Conversely, if the nominal threshold voltage witho
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