<http://webisa.webdatacommons.org/358998079>	<http://www.w3.org/ns/prov#value>	"A method as claimed in claim 1 including positioning said one portion of said second polycrystalline silicon layer relative to said separated portions of said first polycrystalline silicon layer to form a device of the charge coupled type. 6." .
<http://webisa.webdatacommons.org/358998079>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.es> .
<http://webisa.webdatacommons.org/358998079>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/40470761>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/358998079> .