<http://webisa.webdatacommons.org/prov/396589647>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/98655715> .
<http://webisa.webdatacommons.org/98655715>	<http://www.w3.org/ns/prov#value>	"The present invention relates to a semiconductor device featuring a MOS transistor, and more particularly to a semiconductor device which features a new vertical MOS transistor having a back gate electrode." .
<http://webisa.webdatacommons.org/98655715>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/98655715>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .