| prov:value
| - The structure includes a substrate 10 of, e.g., a semiconductor material such as silicon; a layer 12 of metal, e.g., aluminum, overlying a surface 14 of the substrate; a first layer 16 of a dielectric material, e.g., silicon nitride or silicon dioxide; and a covering layer 18 also of a dielectric material, e.g., a polymer material, particularly a polyimide.
|