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  • ode SD2 and the source electrode SD1 are formed simultaneously with the drain signal line D1. [0183] Referring to FIG. 31, the drain signal line D1 is formed on the semiconductor layer do which comprises the insulating film GI, the semiconductor layer AS and amorphous silicon containing impurities, and is formed of a single conducting film, such as chromium, molybdenum, an alloy of chromium and mo
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