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  • ormed in the silicon layer to define a device formation region; a transistor including a gate formed over the...http://www.google.es/patents/US6281054?utm_source=gb-gplus-sharePatente US6281054 - SOI device and method for fabricating the same B???squeda avanzada de patentes N???mero de publicaci???nUS6281054 B1Tipo de publicaci???nConcesi???n N???mero de solicitudUS 09/714,690 Fecha de publicaci??
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