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  • ??t 2005Micron Technology, Inc.Method of passivating an oxide surface subjected to a conductive material annealUS7037828 *10 ao???t 20042 mai 2006Samsung Electronics Co., Ltd.Semiconductor device having a capping layer including cobalt and method of fabricating the sameUS7105358 *13 f???vr. 200212 sept. 2006The Regents Of The University Of CaliforniaDevice for monitoring microfluidic forcesUS88223
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