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  • By photolithographic processes, openings surrounding the P+ semiconductor layers 71 and the link portions of the N+ emitter regions 65 are formed in the resist 73, at areas except for portions of the N+ emitter regions 65 which extend along the inner walls 67 and except for portions of the P+ semiconductor layers 71 which are in the vicinity of the N+ emitter regions 65, to thereby obtain a resist
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