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  • More concretely, the resist composition is coated on a substrate such as a silicon wafer so as to make the thickness of the resulting film about 0.5 to 2 ??m and baked in an oven preferably at a temperature of 70??? to 130??? C. for 10 to 30 minutes, or on a hot plate preferably at a temperature of 70??? to 130??? C. for 1 to 2 minutes.
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