With reference to FIGS. 5A and 5B, silicide is formed on top of all Polycrystalline Silicon surface contacts (Step 119) by depositing an appropriate silicide producing material or metal, such as for example Titanium, Cobalt or Nickel (Step 119 a) and heating the structure to about 600 degrees C. for a short time (Step 119 b), and then dipping off the metal which has not been converted to silicide