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  • In this example, ???R=1; however, with gate insulators such as silicon dioxide (SiO2) with a relative dielectric constant of approximately 4 or high relative dielectric materials such as tantalum pentoxide (Ta2O5) or hafnium oxide (HfO2) with relative dielectric constants of approximately 20 and 25, respectively, pCNFET device applied gate voltages may be lower because comparable electrostatically
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