| prov:value
| - In contrast with the above example, when an element, such as tantalum (Ta), hafnium (Hf), zirconium (Zr), lead (Pb), titanium (Ti), or the like, which, when combined with oxygen, exhibits a larger dielectric constant than silicon oxide is introduced into the third layer 53c of the multilayered polycrystalline silicon layer 53, the dielectric constant of the thermally grown layer 55b formed on that
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