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  • Silsesquioxane spin-on-glass (SOG) dielectric materials are characterized by the general chemical formula R1--Si(OR2)3, where: (1) R1 may be any of several radicals, including but not limited to hydrogen radical (--H) and carbon bonded organic radicals such as but not limited to carbon bonded hydrocarbon radicals (such as but not limited to methyl radical --CH3) and ethyl radical (--C2H5)) and car
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