Resist materials using silicon-containing polymers have also been disclosed (JP-B-3-44290, etc.), but use of such silicon-containing polymers, for instance, poly(p-trimethylsilyloxystyrene) or poly(p-tert-butyldimethylsilyloxystyrene), is encounted with the problems such as low sensitivity and impossibility to perfectly remove the resist material by ashing as it contains silicon.