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  • Oxygen plasma treatment is preferably performed in order to stabilize the exposed surfaces of the amorphous silicon layer 154. [0096] Next, as shown in FIG. 8, a passivation layer 180 is formed by growing a a-Si:C:O film or a a-Si:O:F film by chemical vapor deposition (???CVD???), by depositing an inorganic insulating film such as SiNx, or by coating an organic insulating film such as acryl-based
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