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  • r forming refractory metal nitride layers using organic aminesUS20040096582Nov 14, 2002May 20, 2004Ziyun WangComposition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitrideUS20050028733Aug 30, 2004Feb 10, 2005Micron Technology, Inc.Systems and methods of forming refractory metal nitride layers usin
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