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  • The first insulating film I1 and the first conductor film E1 are materials to be a gateinsulating film IG and a gate electrode GE (see FIG. 1 described above), respectively, by processing later.As the first insulating film Il, an insulating film mainly made of silicon oxide, silicon oxynitride, silicon nitride, tantalum oxide, titanium oxide, aluminum oxide, hafnium oxide, or hafnium silicon oxyni
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