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  • This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, dielectric layer on a substrate by utilizing a glow discharge and a dielectric precursor having the formula ##STR1## wherein R1 is selected from the group consisting of H and --CH3, R2 and R3 are independently selected from the group consisting of H, --CH3, --OCH3 and --OC2 H5 and R4 is selected from the gr
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