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  • The use of an inert carrier gas generally improves mechanical and other film properties of the silicon oxide film, such as hardness, higher deposition rate, and uniformity, and when processed at higher chamber pressures, yields lower dielectric constants in deposited films. [0056] In another embodiment, TMS is provided at a rate of about 1200 sccm, oxygen is provided at a rate of about 300 sccm, a
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