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  • The removal of the dummy gate pattern and the same material film may be achieved by a wet etching process employing hydrofluoric acid, hot phosphoric acid, nitric acid or sulfuric acid, or a dry etching process such as a sputtering, a reactive ion etching or a plasma etching. [0067] Where the interlayer insulating film and the same material film are integrally formed in the single step, the remova
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