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  • The method of claim 23 wherein the gate dielectric is selected from the group including silicon dioxide (SiO2), silicon oxynitride (SiON), silicon nitride (SiN), hafnium oxide (HfO2), hafnium silicate (HfSiO2), hafnium silicon oxynitride (HfSiON), zirconium oxide (ZrO2), Zirconium silicate (ZrSiO2), barium strontium titanate (BaSrTiO3, or BST), and lead zirconate titanate (Pb(ZrTi)O3, or PZT). 25.
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