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  • The dielectric film can be formed of a material selected from the group consisting of silicon oxide (SiO2), silicon nitride (Si3 N4), metal oxide such as tantalum oxide (Ta2 O5), titanium oxide (TiO2) or aluminum oxide (Al2 O3), a ferroelectric material such as PZT(PbZrx Ti1-x O3), BST(Bax Sr1-x TiO3) or ST(SrTiO3), or any combination thereof.
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