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  • Suitable high-dielectric-constant materials that may be usefully employed in capacitive layers of DRAM capacitors in the practice of the present invention include materials such as barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium
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