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  • 30Jul 14, 2005Feb 17, 2009Tokyo Electron LimitedDeposition method for forming a film including metal, nitrogen and carbonUS7514358 *Sep 21, 2005Apr 7, 2009Applied Materials, Inc.Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursorUS7538024May 3, 2005May 26, 2009United Microelectronics Corp.Method of fabricating a dual-damascene copper
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