rocessing chamber at a total flow rate between about 500 sccm and about 3000 sccm, such as between about 1,000 sccm and about 2500 sccm of hydrogen, and generating a plasma in the processing chamber using a power density ranging between about 0.03 W/cm2 and about 3.2 W/cm2, which is a RF power level of between about 10 W and about 1,000 W for a 200 mm substrate.