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  • essed layers of MOS devicesUS7947550Sep 1, 2010May 24, 2011Elpida Memory, Inc.Method of forming semiconductor deviceUS8017489Mar 13, 2008Sep 13, 2011International Business Machines CorporationField effect structure including carbon alloyed channel region and source/drain region not carbon alloyedUS8389316Apr 19, 2011Mar 5, 2013Taiwan Semiconductor Manufacturing Company, Ltd.Strain bars in stressed
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