A method in accordance with claim 1 of forming an EPROM memory cell wherein said acute angle is an angle selected between about 15 and 45 degrees, and said angular ion implantation into said substrate of a dopant employs an arsenic (As) dose within the range of between about 1???1015 cm-2 and about 5???1015 cm-2, implanted at an energy within the range between about 50 keV and about 100 keV in an