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  • miconductor deviceUS7491430 *Jul 14, 2005Feb 17, 2009Tokyo Electron LimitedDeposition method for forming a film including metal, nitrogen and carbonUS7662717Apr 9, 2008Feb 16, 2010Samsung Electronics Co., Ltd.Method of forming metal layer used in the fabrication of semiconductor deviceUS7692222Nov 7, 2006Apr 6, 2010Raytheon CompanyAtomic layer deposition in the formation of gate structures for III
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