| prov:value
| - In other arrangements the first and second layers may be formed of Aluminium GaN (AlGaN), Indium GaN (InGaN), InGaAlN, or InAlN. In further arrangements, the first and second layers may be formed from different semiconductor materials for example InGaN/AlGaN, InGaN/GaN, GaN/AlGaN, GaN/AlInGaN, InGaN/AlInGaN, AlGaN/AlInGaN, or other combinations thereof.
|