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  • The substrate temperature is preferably between about 100 and 400??? C. It will be appreciated that the aluminum layer 62 can be formed by a variety of methods, including RF sputtering, DC sputtering, ion beam sputtering, these and other methods being known to one of ordinary skill in the art. [0053]FIG. 9 illustrates the formation of an aluminum oxide barrier layer 68 over the ITO layer 56.
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