These circuits and the data lines 20a, 20b, . . . areformed by using the same metal as that constituting the address lines 10a, 10b, . . . , so as to have a thickness of e.g. 100-400 nm.Next, as shown in FIG. 9E, the entire pixel region P1 is covered with a first upper insulating film 3 made of e.g. a silicon nitride film having a thickness of 100-200 nm.