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  • For example, a low-k dielectric material such as a fluorinated oxide of silicon (e.g., SiOF) or carbon doped oxide of silicon (e.g., carbon doped silicon dioxide, SiO2) may be deposited by Chemical Vapor Deposition (CVD). [0033] The trench 106 may be formed within the dielectric layer by using well-known masking, lithography, and etching techniques.
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