| http://www.w3.org/ns/prov#value | - Additionally, although the above describes an embodiment of the invention where memory cells are a stacked-gate ETOX, CHE/FN cells, other embodiments include array of other types of memory cells such as split-gate memory cells, source side-injection Flash memory cells, EPROM cells, or event mask ROMs in which data bit are according to a threshold voltage (Vt) implant.
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