About: http://webisa.webdatacommons.org/101333958

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates to high density memory devices based on phase change based memory materials, including chalcogenide based materials, and to methods for manufacturing such devices.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com