| http://www.w3.org/ns/prov#value | - In the second step shown in FIG. 4, the substrate 1 with the amorphous semiconductor 2 thereon is placed in a vacuum or an inert gas atmosphere such as nitrogen gas or the like, and irradiated from the substrate side with an Ar laser as a source of high energy beams so that the amorphous semiconductor 2 is polycrystallized.
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